PHOTOLUMINESCENCE CHARACTERIZATION OF ZNSE DOPED WITH GA BY BULK AND PLANAR DOPING TECHNIQUES IN MOLECULAR-BEAM EPITAXY

被引：46
|
作者：
SKROMME, BJ
SHIBLI, SM
DEMIGUEL, JL
TAMARGO, MC
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期
关键词：
D O I：
10.1063/1.343342
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：3999 / 4005
页数：7
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