INFLUENCE OF ION-IMPLANTATION ON THE LUMINESCENCE OF GAAS

被引：0
|
作者：
SCIBIOR, H
BRYLOWSKA, I
MAZUREK, P
SUBOTOWICZ, M
机构：
[1] Marie Curie-Sklodowska Univ, Poland
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 109卷 / 02期
关键词：
Luminescence - Semiconductor Materials--Ion Implantation;
D O I：
10.1002/pssa.2211090227
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence (PL) and electroluminescence (EL) measurements on GaAs in the spectral range 0.75 to 1.4 ev are performed at 93 K. The influence of arsenic and gallium ion implantations on the luminescence in this region is examined and the role of impurities like Cu, O, Si is studied. Some suggestions relative to the nature of defect centers responsible for the emission in this region are presented.
引用
收藏
页码：597 / 601
页数：5
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