共 50 条
- [1] PROBABILITY OF CAPTURE AND DISPERSIVE TRANSPORT IN NONCRYSTALLINE SEMICONDUCTORSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 336 - 337BARANOVSKII, SDKARPOV, VG
- [2] A POSSIBLE METHOD OF DETERMINING THE RATIO OF CAPTURE CROSS SECTIONS OF RECOMBINATION CENTERS IN SEMICONDUCTORSSOVIET PHYSICS-SOLID STATE, 1960, 1 (11): : 1612 - 1614KALASHNIKOV, SGKONSTANTINESKU, K
- [3] A CONTACTLESS METHOD OF DETERMINING TEMPERATURE DEPENDENCE OF ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORSINSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1965, (05): : 1260 - &SOKOLOV, VI
- [4] TEMPERATURE DEPENDENCES OF THE NONRADIATIVE MULTIPHONON CARRIER CAPTURE AND EJECTION PROPERTIES OF DEEP TRAPS IN SEMICONDUCTORS .2. INTERPRETATION AND EXTRAPOLATION OF CAPTURE DATAPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 103 (02): : 673 - 686PASSLER, R
- [5] TEMPERATURE AND PRESSURE DEPENDENCES OF THE DIELECTRIC-CONSTANTS OF SEMICONDUCTORSPHYSICAL REVIEW B, 1983, 27 (06): : 3494 - 3505SAMARA, GA
- [6] PRESSURE AND TEMPERATURE DEPENDENCES OF THE DIELECTRIC-PROPERTIES OF SEMICONDUCTORSBULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 363 - 363SAMARA, GA
- [7] SIMPLE APPROXIMATION FOR TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORSPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 86 (01): : K45 - K47PASSLER, R
- [8] INTERMEDIATE-TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORSPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 86 (01): : K39 - K44PASSLER, R
- [9] A method for determining microinhomogeneities in semiconductorsJOURNAL OF APPLIED PHYSICS, 1998, 83 (10) : 5277 - 5281Chaikovsky, IAlperovich, L
- [10] Method for determining microinhomogeneities in semiconductors1998, Am Inst Phys, Woodbury, NY, United States (83)Chaikovsky, I.Alperovich, L.