THERMAL ANNEALING OF HIGH-CURRENT IMPLANTATION-INDUCED DEFECTS IN SILICON

被引：0
|
作者：
DAS, G [1 ]
机构：
[1] IBM CORP,E FISHKILL FACIL,DIV DATA SYST,HOPEWELL JUNCTION,NY 12533
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C367 / C367
页数：1
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