LUMINESCENCE FROM IN0.5GA0.5P PREPARED BY VAPOR-PHASE EPITAXY

被引：34
|
作者：
KRESSEL, H [1 ]
NUESE, CJ [1 ]
LADANY, I [1 ]
机构：
[1] RCA LABS,PRINCETON,NJ 08540
来源：
JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 07期
关键词：
D O I：
10.1063/1.1662745
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3266 / 3272
页数：7
相关论文
共 50 条
  • [1] GA0.5IN0.5P/GAAS INTERFACES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    BOUR, DP
    SHEALY, JR
    MCKERNAN, S
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (04) : 1241 - 1243
  • [2] DOPING STUDIES OF GA0.5IN0.5P ORGANOMETALLIC VAPOR-PHASE EPITAXY
    HSU, CC
    YUAN, JS
    COHEN, RM
    STRINGFELLOW, GB
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 395 - 398
  • [3] THE CHARACTERISTICS OF AN IN0.5GA0.5P AND IN0.5GA0.5P/GAAS HETEROJUNCTION GROWN ON A (100) GAAS SUBSTRATE BY LIQUID-PHASE EPITAXY
    LEE, JB
    KWON, SD
    KIM, I
    CHO, YH
    CHOE, BD
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) : 5016 - 5021
  • [4] PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    DONG, JR
    WANG, ZG
    LIU, XL
    LU, DC
    WANG, D
    WANG, XH
    APPLIED PHYSICS LETTERS, 1995, 67 (11) : 1573 - 1575
  • [5] Transport property of In0.5Ga0.5P layers grown by liquid phase epitaxy
    Yoon, IT
    Oh, SJ
    Park, HL
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) : 1527 - 1530
  • [6] MAGNESIUM-DOPED IN0.5GA0.5P GROWTH BY LIQUID-PHASE EPITAXY
    CHANG, LB
    CHENG, KY
    LIU, CC
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1116 - 1119
  • [7] TELLURIUM AND ZINC DOPING IN IN0.5GA0.5P GROWN BY LIQUID-PHASE EPITAXY
    WU, MC
    SU, YK
    CHANG, CY
    CHENG, KY
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4317 - 4321
  • [8] Amphoteric behavior of Sn in In0.5Ga0.5P layers grown by liquid phase epitaxy
    Yoon, IT
    Oh, SJ
    Park, HL
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) : 2014 - 2018
  • [9] AMPHOTERIC BEHAVIOR OF GERMANIUM IN IN0.5GA0.5P GROWN BY LIQUID-PHASE EPITAXY
    LEE, JB
    KIM, I
    KWON, HK
    CHOE, BD
    APPLIED PHYSICS LETTERS, 1993, 62 (14) : 1620 - 1622
  • [10] Temperature dependence of free-exciton luminescence of undoped In0.5Ga0.5P layers grown by liquid phase epitaxy
    Yoon, IT
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1998, 17 (24) : 2043 - 2045
12345