SILICON RIBBON GROWTH USING ELECTRON-BOMBARDMENT

被引：5

|

作者：

CASENAVE, D

GAUTHIER, R

VANDEKERKOVE, L

PINARD, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：698 / 700

页数：3

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