EXPERIMENTAL STATIC AND DYNAMIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS FOR RESISTIVE LOADS

Experimental results are given for a PMOS-controlled thyristor (PMCT). The static I-A-V-AK characteristics of a PMCT were measured using a programmable high power curve tracer for both forward and reverse anode-to-cathode voltage V-AK at different temperatures. The characteristics are similar to the I-D-V-D characteristics of typical p-n junction diodes. The device has a low forward voltage drop at high-current levels, e.g. V-F(AK) = 1.6 V at I-A = 200 A. The dynamic behavior of the PMCT was measured in a single switch configuration under resistive loading. The transient waveforms of anode current i(A), gate current i(G), anode-to-cathode voltage v(AK), and gate-to-anode drive voltage v(GA) were observed at turn-on and turn-off for power levels up to 5 kW. The measured turn-on time was 0.3 mu s and the measured turn-off time was 2.2 mu s. The switching power loss and the conduction power loss were 3 W and 18 W, respectively.