EXCITATION OF ALFVEN WAVES AT THE DIFFERENCE FREQUENCY OF 2 MICROWAVE BEAMS IN A HIGHLY COLLISIONAL MAGNETOACTIVE COMPENSATED SEMICONDUCTOR

A theoretical investigation has been carried out on the excitation of electromagnetic Alfven waves at the difference frequency of two microwave beams propagating in a highly collisional magnetoactive compensated semiconductor plasma, viz., germanium. The kinetic theory, viz., the Boltzmann-transport equation and the Krook-model solution, has been employed to find the nonlinear response of electrons and holes in a highly collisional compensated semiconductor plasma in the presence of an external static magnetic field. We show that for typical plasma parameters in compensated Ge, two microwave beams of equal power density 1 MW cm-2 can excite electromagnetic Alfven waves of power density 100 kW cm-2. The power carried by the excited Alfven wave gradually decreases with the electron-phonon collision frequency in the collision-dominated semiconductor.