GAAS/ALGAAS GRIN-SCH-SQW DBR LASER-DIODES WITH PASSIVE WAVE-GUIDES INTEGRATED BY COMPOSITIONAL DISORDERING OF THE QUANTUM-WELL USING ION-IMPLANTATION

被引：6
|
作者：
HIRATA, T
MAEDA, M
SUEHIRO, M
HOSOMATSU, H
机构：
[1] Optical Measurement Technology Development Co. Ltd, Central Research Laboratory, Musashino-shi, Tokyo, 180, 11-13
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 06期
关键词：
Dbr; Disordering; Electron beam lithography; Gaas/; AIGaAs; Grin-SCH-SQW; Ion implantation; Ld; Linewidth; Movpe; Optical IC;
D O I：
10.1143/JJAP.29.L961
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs/AlGaAs GRIN-SCH-SQW DBR laser diodes are fabricated by ion implantation and two-step MOVPE growth. Passive waveguides are monolithically integrated by compositional disordering of quantum well heterostructures using silicon ion implantation. Waveguide losses of partially disordered GRIN-SCH-SQW passive waveguides are measured, and propagation losses as low as 4.4 cm-1 are observed at the lasing wavelength. Stable single mode operation is obtained, and the narrowest linewidth achieved is 840 kHz. The results show that this fabrication process is useful for photonic integrated circuits. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码：L961 / L963
页数：3
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