ANALYSIS OF THE EFFECT OF THERMAL NITRIDATION OF SILICON DIOXIDE ON SILICON INTERSTITIAL CONCENTRATION

被引：10
|
作者：
DUNHAM, ST
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期
关键词：
D O I：
10.1063/1.339669
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1195 / 1201
页数：7
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