CHARACTERIZATION OF DAMAGED LAYER USING AC SURFACE PHOTOVOLTAGE IN SILICON-WAFERS

被引：1

作者：

SHIMIZU, H ^{[1
]}

MUNAKATA, C ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9A期

关键词：

SILICON WAFER; DAMAGED LAYER; ALUMINUM; RCA RINSE; AC SURFACE PHOTOVOLTAGE; SCANNING PHOTON MICROSCOPE;

D O I：

10.1143/JJAP.32.3780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AC surface photovoltage (SPV) responds to damaged layers in n-type silicon (Si) wafers with depleted or inverted surfaces. Excited carriers recombine at broken bonds in a damaged layer, and the ac SPV is then reduced depending on whether slight or heavy damage exists at the Si surface. The ac SPV is related to the thermally modulated reflectance signal and, thus, is qualitatively applicable to nondestructive evaluation of the damaged layer.

引用

页码：3780 / 3781

页数：2

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