共 50 条
- [1] IMPURITY CONDUCTION IN MANGANESE-DOPED GALLIUM-ARSENIDE PHYSICAL REVIEW B, 1974, 10 (04): : 1760 - 1761
- [3] LIFETIME AND DESORPTION ACTIVATION-ENERGY OF OXIDES AND HYDROXIDES ON MONOCRYSTAL SURFACE OF GALLIUM-ARSENIDE ZHURNAL TEKHNICHESKOI FIZIKI, 1977, 47 (03): : 621 - 624
- [4] IMPURITY THERMOREFLECTION OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 741 - 743
- [5] IMPURITY ANALYSIS OF GALLIUM-ARSENIDE SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 165 - 170
- [6] IMPURITY EFFECT ON STACKING-FAULT ENERGY IN GALLIUM-ARSENIDE FIZIKA TVERDOGO TELA, 1980, 22 (02): : 477 - 482
- [7] PARAMAGNETISM OF THE MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (32): : 5539 - 5545
- [8] IMPURITY AND DEFECT LEVELS (EXPERIMENTAL) IN GALLIUM-ARSENIDE ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS, 1983, 61 : 63 - 160
- [9] KINETICS OF DECAY OF THE IMPURITY LUMINESCENCE OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 772 - 775