P-TYPE AND N-TYPE BEHAVIOR OF CHROMIUM-OXIDE AS A FUNCTION OF THE APPLIED POTENTIAL

被引：50

作者：

METIKOSHUKOVIC, M ^{[1
]}

CERAJCERIC, M ^{[1
]}

机构：

[1] PLIVA, ZAGREB, YUGOSLAVIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 09期

关键词：

D O I：

10.1149/1.2100850

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2193 / 2197

页数：5

共 50 条

[1] N-TYPE BEHAVIOR OF CHROMIUM (III) OXIDE
YOUNG, EWA
STIPHOUT, PCM
DEWIT, JHW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) : 884 - 886
[2] ELECTROPOLISHING OF N-TYPE GERMANIUM AND P-TYPE AND N-TYPE SILICON
KLEIN, DL
KOLB, GA
POMPLIANO, LA
SULLIVAN, MV
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : C60 - C60
[3] BARRIERS ON N-TYPE AND P-TYPE GERMANIUM
RAHIMI, S
HENISCH, HK
APPLIED PHYSICS LETTERS, 1981, 38 (11) : 896 - 897
[4] p-Type and n-type azobenzene nanocluster immobilized graphene oxide nanocomposite
Deka, Manash Jyoti
Sahoo, Subham Kumar
Chowdhury, Devasish
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 2019, 372 : 131 - 139
[5] Comparison of surface photovoltage behavior for n-type versus p-type GaN
Foussekis, M.
Baski, A. A.
Reshchikov, M. A.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (04):
[6] ANALYSIS OF CURRENT POTENTIAL CHARACTERISTICS AT N-TYPE AND P-TYPE SEMICONDUCTOR ELECTRODES
MEISSNER, D
MEMMING, R
ELECTROCHIMICA ACTA, 1992, 37 (05) : 799 - 809
[7] DIFFERENT P(IN) ANTISITES IN N-TYPE AND P-TYPE INP
SUN, HJ
GISLASON, HP
RONG, CF
WATKINS, GD
PHYSICAL REVIEW B, 1993, 48 (23): : 17092 - 17105
[8] PdIn contacts to n-type and p-type GaP
Lin, CF
Ingerly, DB
Chang, YA
APPLIED PHYSICS LETTERS, 1996, 69 (23) : 3543 - 3545
[9] THERMOMAGNETIC PROPERTIES OF N-TYPE AND P-TYPE HGTE
JEDRZEJCZAK, A
DIETL, T
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 76 (02): : 737 - 751
[10] PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE SILICON IN ACETONITRILE
BYKER, HJ
WOOD, VE
AUSTIN, AE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 1982 - 1987

← 1 2 3 4 5 →