SURFACE-STATE DENSITY AT (HYDROGEN-CHLORIDE) OXIDE-SILICON INTERFACE

被引：31
|
作者：
SEVERI, M
SONCINI, G
机构：
来源：
ELECTRONICS LETTERS | 1972年 / 8卷 / 16期
关键词：
D O I：
10.1049/el:19720293
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：402 / &
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