PROPOSAL FOR DEVICE TRANSPLANTATION USING A FOCUSED ION-BEAM

被引：15
|
作者：
OHNISHI, T
KAWANAMI, Y
ISHITANI, T
机构：
[1] Central Research Laboratory, Hitachi Ltd, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 01期
关键词：
Deposition; Device transplantation; Focused ion beam; Microdevice; Sputtering;
D O I：
10.1143/JJAP.29.L188
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Device transplantation using a focused ion beam (FIB) has been proposed as a new high-resolution technique for microdevice assembly as well as device repair. FIB sputtering, redeposition, and FIB-induced deposition each work as a cutter or a fixer. Feasibility experiments have been carried out both for dummy-device transplantation on a silicon substrate and for microgear fabrication. © 1990 IOP Publishing Ltd.
引用
收藏
页码：L188 / L190
页数：3
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