THE IONIZATION-ENHANCED DEFECT PRODUCTION IN DOPED SILICON

被引：0
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作者：
KHABIBULLAEV, PK
ABDURAKHMANOVA, SN
ZAIKOVSKAIA, MA
MANNANOVA, KK
OKSENGENDLER, BL
IUNUSOV, MS
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DOKLADY AKADEMII NAUK SSSR | 1988年 / 299卷 / 02期
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O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
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页码：358 / 362
页数：5
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