CHARACTERIZATION OF INGAASP INP DOUBLE-HETEROSTRUCTURE WAFERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY FOR SEMICONDUCTOR-LASERS BY PHOTOLUMINESCENCE INVESTIGATION WITH HIGH-POWER YAG-LASER EXCITATION

被引：8
|
作者：
NAKAO, M
SATO, K
OISHI, M
ITAYA, Y
IMAMURA, Y
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期
关键词：
D O I：
10.1063/1.339908
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1722 / 1728
页数：7
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