共 50 条
- [1] ELECTRON ACCUMULATION AT THE N-ZNSE/N-GAAS INTERFACE JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 357 - 361
- [4] INTERFACE STATES IN N-ZNSE/N-GAAS HETEROSTRUCTURE CHARACTERIZED BY DEEP LEVEL TRANSIENT SPECTROSCOPY TECHNIQUE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L541 - L543
- [5] Interfacial superstructure of AlN/n-GaAs(001) system fabricated by metalorganic chemical vapor deposition Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (08):
- [6] Annealing effect of ZnSe:N/ZnSe grown by metalorganic chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (5A): : 2725 - 2728
- [7] Annealing effect of ZnSe:N/ZnSe grown by metalorganic chemical vapor deposition Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (5 A): : 2725 - 2728
- [8] INTERFACIAL SUPERSTRUCTURE OF AIN/N-GAAS(001) SYSTEM FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1401 - L1403
- [10] Analysis of the depletion layers and conduction band barrier at the n-ZnSe/n-GaAs interface for different growth start procedures PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6, 2012, 9 (06): : 1400 - 1403