EFFECT OF KR+-MIXING AND THERMAL-TREATMENT ON CO-SILICIDE FORMATION

被引：6
|
作者：
GAIDUK, PI
KOMAROV, FF
WITZMANN, A
ZENTGRAF, A
SCHIPPEL, S
机构：
[1] UNIV JENA, INST FESTKORPERPHYS, D-07743 JENA, GERMANY
[2] MINSK APPL PHYS PROBLEMS INST, MINSK 220064, BELARUS
[3] LAYERTEC OPT BESCHICHTUNGEN GMBH, D-99441 MELLINGEN, GERMANY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 94卷 / 03期
关键词：
D O I：
10.1016/0168-583X(94)95359-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Silicide formation in the Co/Si system during ion beam mixing with Kr+ at elevated temperatures and subsequent annealing has been studied as a function of Kr+ dose, implantation temperature and annealing conditions. It was found that CoSi is formed during ion beam mixing even at room temperature. The formation of Co2Si is only detected for mixing at a target temperature of 350 degrees C. During the additional thermal treatment at temperatures between 600 degrees C and 1000 degrees C the whole Co-layer reacts with silicon and polycrystalline CoSi2 grows. The grain size of CoSi2 was found to depend on Kr+ dose, implantation temperature and substrate orientation.
引用
收藏
页码：231 / 236
页数：6
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