EFFECT OF ELECTRON-HOLE PAIRS ON THE MELTING OF SILICON

被引:42
|
作者
BOK, J
机构
关键词
D O I
10.1016/0375-9601(81)91007-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:448 / 450
页数:3
相关论文
共 50 条
  • [1] ON THE THRESHOLD FOR MELTING OF SILICON IN THE PRESENCE OF A DENSE ELECTRON-HOLE PLASMA
    WAUTELET, M
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (24): : 4255 - 4258
  • [2] Curved paths of electron-hole pairs
    Jauregui, Luis A.
    Kim, Philip
    NATURE MATERIALS, 2017, 16 (12) : 1169 - 1170
  • [3] ELECTRON-HOLE DROPS IN SILICON
    CAPIZZI, M
    VOOS, M
    BENOITALAGUILLAUME, C
    MCGRODDY, JC
    SOLID STATE COMMUNICATIONS, 1975, 16 (06) : 709 - 712
  • [4] Size of electron-hole pairs in π-conjugated systems
    Knupfer, M
    Pichler, T
    Golden, MS
    Fink, J
    Murgia, M
    Michel, RH
    Zamboni, R
    Taliani, C
    PHYSICAL REVIEW LETTERS, 1999, 83 (07) : 1443 - 1446
  • [5] THE QUANTUM YIELD OF ELECTRON-HOLE PAIRS IN GERMANIUM
    GOUCHER, FS
    PHYSICAL REVIEW, 1950, 78 (05): : 646 - 646
  • [6] MANIFOLDING OF ELECTRON-HOLE PAIRS IN PHOTOGRAPHICAL EMULSION
    ROOZE, NS
    FIZIKA TVERDOGO TELA, 1974, 16 (05): : 1557 - 1559
  • [7] PHOTOEXCITATION OF ELECTRON-HOLE PAIRS DURING SIMS
    KEMPF, J
    NONNENMACHER, M
    WAGNER, HH
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (03): : 279 - 283
  • [8] The size of electron-hole pairs in π-conjugated oligomers
    Knupfer, M
    Zojer, E
    Leising, G
    Fink, J
    SYNTHETIC METALS, 2001, 119 (1-3) : 499 - 502
  • [9] THE PHOTON YIELD OF ELECTRON-HOLE PAIRS IN GERMANIUM
    GOUCHER, FS
    PHYSICAL REVIEW, 1950, 78 (06): : 816 - 816
  • [10] Photoexcitation of electron-hole pairs during SIMS
    Kempf, J.
    Nonnenmacher, M.
    Wagner, H.H.
    Applied Physics A: Solids and Surfaces, 1989, 49 (03): : 279 - 283