BAND-EDGE OPTICAL-ABSORPTION IN INTRINSIC SILICON - ASSESSMENT OF THE INDIRECT TRANSITION AND DISORDER MODELS (VOL 73, PG 3988, 1993)

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作者：

CORKISH, R

GREEN, MA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.355344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：6462 / 6462

页数：1

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[1] BAND EDGE OPTICAL-ABSORPTION IN INTRINSIC SILICON - ASSESSMENT OF THE INDIRECT TRANSITION AND DISORDER MODELS
CORKISH, R
GREEN, MA
JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) : 3988 - 3996
[2] Erratum: 'band edge optical absorption in intrinsic silicon: assessment of the indirect transition and disorder models' [J. Appl. Phys. 73, 3988 (1993)]
1600, American Inst of Physics, Woodbury, NY, USA (74):
[3] Erratum. 'Band edge optical absorption in intrinsic silicon. Assessment of the indirect transition and disorder models'
1600, (74):
[4] AN INVESTIGATION OF THE POROUS SILICON OPTICAL-ABSORPTION POWER-LAW NEAR THE BAND-EDGE
DERLET, PM
CHOY, TC
STONEHAM, AM
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