TEMPERATURE-DEPENDENCE OF THE ABSORPTION-EDGE IN CUGAS2

被引：15

作者：

HORIG, W ^{[1
]}

NEUMANN, H ^{[1
]}

RECCIUS, E ^{[1
]}

WEINERT, H ^{[1
]}

KUHN, G ^{[1
]}

SCHUMANN, B ^{[1
]}

机构：

[1] KARL MARX UNIV,ARBEITSGEMEINSCHAFT A3B5 HALBLEITER,FACHBEREICH KRISTALLOG,DDR-701 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 01期

关键词：

BAND STRUCTURE;

D O I：

10.1002/pssa.2210510105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Temperature dependence has been determined by absorption measurements in single crystals and thin films. A linear charge of the gap energy E//g with a temperature coefficient of dE//g/dT equals minus (2. 2 plus or minus 0. 2) multiplied by 10** minus **4eV/K is found in the temperature range from 80 to 300 K. The downshift in the absolute values of dE//g/dT of the I-III-VI//2 and I-VII compounds compared to their II-VI analogs can be explained by the p-d hybridization of the uppermost valence band.

引用

页码：57 / 62

页数：6

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