INSITU CONTROL OF THE GROWING SURFACE IN HIGH-VACUUM MOVPE OF GAAS

被引：2

作者：

JONSSON, J ^{[1
]}

DEPPERT, K ^{[1
]}

JEPPESEN, S ^{[1
]}

PAULSSON, G ^{[1
]}

SAMUELSON, L ^{[1
]}

SCHMIDT, P ^{[1
]}

机构：

[1] ACAD SCI GDR,CENT INST OPT & SPECT,O-1086 BERLIN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90604-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[No abstract available]

引用

页码：1047 / 1048

页数：2

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