COMPOSITION MODULATION IN LATTICE-MATCHED ZN1-XMGXSYSE1-Y ZNSE BUFFER LAYER GAAS HETEROSTRUCTURES

被引：33

作者：

KUO, LH ^{[1
]}

SALAMANCARIBA, L ^{[1
]}

WU, BJ ^{[1
]}

DEPUYDT, JM ^{[1
]}

HAUGEN, GM ^{[1
]}

CHENG, H ^{[1
]}

GUHA, S ^{[1
]}

HAASE, MA ^{[1
]}

机构：

[1] THREE M CO,ST PAUL,MN 55144

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.112079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[100] composition modulation as well as [101] and [1BAR01] tweed strain contrast were observed in lattice matched Zn1-xMg(x)S(y)Se1-y epitaxial films grown on ZnSe buffer layers. The composition modulation corresponds to regions with different S and Mg concentration in a direction perpendicular to the growth direction. Very high quality lattice matched Zn1-xMg(x)S(y)Se1-y films with a ZnSe quantum well were grown on As stabilized GaAs substrates exposed to Zn for a short time. The density of defects in these samples was less than 5 x 10(4)/cm2. Other samples showed rough interfaces and high densities of Frank partial dislocations. The roughness is believed to result from an As-rich GaAs surface produced after the desorption of oxide under As overpressure.

引用

页码：1230 / 1232

页数：3

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