A COMPARISON OF DEEP LEVEL DEFECTS IN OMVPE GAAS-LAYERS GROWN ON VARIOUS GAAS SUBSTRATE TYPES

被引：8
|
作者：
AURET, FD
NEL, M
LEITCH, AWR
机构：
[1] Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 89卷 / 2-3期
关键词：
DEEP LEVEL DEFECTS - DEEP LEVEL TRANSIENT SPECTROSCOPY - ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE) - SEMI-INSULATING SUBSTRATES;
D O I：
10.1016/0022-0248(88)90415-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：308 / 312
页数：5
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