BIS INVESTIGATION OF PD-SI(111)7X7 INTERFACE FORMATION

被引：1

作者：

VEUILLEN, JY ^{[1
]}

NGUYEN, TT ^{[1
]}

CINTI, R ^{[1
]}

DADDATO, S ^{[1
]}

TURCHINI, S ^{[1
]}

NANNARONE, S ^{[1
]}

SANTANIELLO, A ^{[1
]}

ROSSI, G ^{[1
]}

机构：

[1] CNRS,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

来源：

VACUUM | 1990年 / 41卷 / 1-3期

关键词：

D O I：

10.1016/0042-207X(90)90456-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A combined BIS-XPS study of the Pd{single bond}Si(111)7 × 7 interface formation is presented. A Pd2Si-like distribution of partial d density of empty states is found starting from the early stages of Si{single bond}Pd bond formation. © 1990 Pergamon Press plc.

引用

页码：702 / 704

页数：3

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