LIGHT-EMITTING SI PREPARED BY LASER ANNEALING OF A-SI-H

被引：4
|
作者：
ELKADER, KMA
ULRYCH, I
CHAB, V
OSWALD, J
KUBAT, P
ENGST, P
STUCHLIK, J
FEJFAR, A
CERNY, R
PELANT, I
KOCKA, J
机构：
[1] ACAD SCI CZECH REPUBL,INST PHYS,CR-16200 PRAGUE 6,CZECH REPUBLIC
[2] J HEYROVSKY INST PHYS CHEM & ELECTROCHEM,CR-18223 PRAGUE 8,CZECH REPUBLIC
[3] CZECH TECH UNIV,FAC CIVIL ENGN,DEPT PHYS,CR-16629 PRAGUE 6,CZECH REPUBLIC
来源：
THIN SOLID FILMS | 1995年 / 255卷 / 1-2期
关键词：
ANNEALING; LASER IRRADIATION; SILICON;
D O I：
10.1016/0040-6090(94)05684-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present time-resolved reflectivity, photoluminescence, dark conductivity and morphology studies of light-emitting Si prepared by pulsed XeCl laser irradiation of amorphous hydrogenated silicon (a-Si:H) deposited on a silica substrate by glow discharge deposition. Laser-induced melting and recrystallization of the a-Si:H layers lead to visible room temperature photoluminescence, accompanied by an increase in dark conductivity by more than three orders of magnitude. We investigate the influence of the number of applied laser pulses on the properties of the processed layers.
引用
收藏
页码：302 / 304
页数：3
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