LONG-WAVELENGTH INFRARED DETECTION IN A PHOTOVOLTAIC-TYPE SUPERLATTICE STRUCTURE

被引:0
|
作者
BYUNGSUNG, O [1 ]
CHOE, JW [1 ]
FRANCOMBE, MH [1 ]
BANDARA, KMSV [1 ]
SORAR, E [1 ]
COON, DD [1 ]
LIN, YF [1 ]
TAKEI, WJ [1 ]
机构
[1] WESTINGHOUSE ELECT CORP,CTR SCI & TECHNOL,PITTSBURGH,PA 15235
来源
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The first successful demonstration of long wavelength infrared (LWIR) detection with a photovoltaic-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is centered near 10-mu-m in good agreement with the theoretical response band provided that electron-electron interactions are taken into account. The detector operates at significantly lower bias voltage than photoconductive multiple quantum well LWIR detectors. This could lead to important advantages in applications to photovoltaic detector arrays. Optimization through the use of termination layers at the ends of superlattices is also discussed. The response at 83 K is about 50% of the response at 24 K which is 5 mA/W. Optimization of the response, operating temperature or bias voltage has not been carried out.
引用
收藏
页码:1789 / 1793
页数:5
相关论文
共 50 条
  • [1] LONG-WAVELENGTH INFRARED DETECTION IN A KASTALSKY-TYPE SUPERLATTICE STRUCTURE
    BYUNGSUNG, O
    CHOE, JW
    FRANCOMBE, MH
    BANDARA, KMSV
    COON, DD
    LIN, YF
    TAKEI, WJ
    APPLIED PHYSICS LETTERS, 1990, 57 (05) : 503 - 505
  • [2] Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors
    Anselm, KA
    Ren, H
    Vilela, M
    Zheng, J
    Lin, CH
    Nathan, V
    Brown, G
    PHOTODETECTORS: MATERIALS AND DEVICES VI, 2001, 4288 : 183 - 190
  • [3] LONG-WAVELENGTH INASSB STRAINED-LAYER SUPERLATTICE PHOTOVOLTAIC INFRARED DETECTORS
    KURTZ, SR
    DAWSON, LR
    BIEFELD, RM
    FRITZ, IJ
    ZIPPERIAN, TE
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 150 - 152
  • [4] InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection
    Xin, Liwei
    Wang, Tao
    Yang, Jin
    Wang, Jingwei
    Yin, Fei
    Hu, Yanan
    Jiao, Guohua
    Zhang, Lichen
    Yin, Jingzhi
    Song, Zhenyu
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (09): : 1017 - 1020
  • [5] Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection
    Delmas, M.
    Kwan, D. C. M.
    Debnath, M. C.
    Liang, B. L.
    Huffaker, D. L.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (47)
  • [6] NEW RESONANT TUNNELING SUPERLATTICE AVALANCHE PHOTODIODE DEVICE STRUCTURE FOR LONG-WAVELENGTH INFRARED DETECTION
    SUMMERS, CJ
    BRENNAN, KF
    APPLIED PHYSICS LETTERS, 1987, 51 (04) : 276 - 278
  • [7] Voltage tunable superlattice infrared detector for mid- and long-wavelength detection
    Majumdar, A
    Choi, KK
    Reno, JL
    Tsui, DC
    APPLIED PHYSICS LETTERS, 2005, 86 (26) : 1 - 3
  • [8] Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe
    David R. Rhiger
    Journal of Electronic Materials, 2011, 40 : 1815 - 1822
  • [9] Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe
    Rhiger, David R.
    JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (08) : 1815 - 1822
  • [10] Binary superlattice quantum-well infrared photodetectors for long-wavelength broadband detection
    Ellis, AR
    Majumdar, A
    Choi, KK
    Reno, JL
    Tsui, DC
    APPLIED PHYSICS LETTERS, 2004, 84 (25) : 5127 - 5129