EFFECTS OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE ON INVERSION-LAYER HOLE MOBILITY AT 300-K AND 77-K

The effects of radiation-induced interface-trapped charge and oxide-trapped charge on the inversion-layer hole mobility in p-channel double-diffused metal-oxide-semiconductor transistors at 300 and 77 K are reported. The mobility degradation is more pronounced at 77 than at 300 K, due to an increased importance of Coulomb scattering from trapped charge when phonon scattering is significantly reduced. The mobility degradation is primarily due to interface-trapped charge, but the effects of oxide-trapped charge must be taken into account in order to properly describe the mobility behavior, particularly at cryogenic temperatures.