ZNSE GROWTH BY LASER-ENHANCED METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引:5
|
作者
YEH, MY
HU, CC
LIN, GL
LEE, MK
机构
[1] Institute of Electrical Engineering, National Sun-Yat Sen University, Kaohsiung
基金
美国国家科学基金会;
关键词
D O I
10.1016/0040-6090(92)90428-E
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, low pressure metal organic chemical vapour deposition was used, accompanied by 488 nm argon ion laser irradiation, to study the growth of ZnSe epilayers. With laser irradiation. a faster growth rate was obtained and the crystallinity was improved. Better optical properties appeared when the growth temperature was below 400-degrees-C. The influence of the laser power density was also examined between 0 and 0.2 W/cm-2 at a growth temperature of 350-degrees-C. The growth rate and quality were improved with increasing laser power density.
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收藏
页码:142 / 146
页数:5
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