WET-CHEMICAL ETCHING OF III-V SEMICONDUCTORS

被引:0
|
作者
KELLY, JJ
VANDENMEERAKKER, JEAM
NOTTEN, PHL
TIJBURG, RP
机构
来源
PHILIPS TECHNICAL REVIEW | 1988年 / 44卷 / 03期
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:61 / 74
页数:14
相关论文
共 50 条
  • [1] Wet etching of III-V semiconductors
    Gomes, WP
    PROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS, 2001, 73 : 215 - 295
  • [2] Speciation During Wet Etching of III-V Semiconductors
    Hinckley, A.
    Foster, E.
    Corley, T.
    Muscat, A. J.
    15TH INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR CLEANING SCIENCE AND TECHNOLOGY (SCST 15), 2017, 80 (02): : 163 - 170
  • [3] Chemical etching of group III-V semiconductors
    Kadhim, NJ
    Laurie, SH
    Mukherjee, D
    JOURNAL OF CHEMICAL EDUCATION, 1998, 75 (07) : 840 - 843
  • [4] MICROMACHINING IN III-V SEMICONDUCTORS USING WET PHOTOELECTROCHEMICAL ETCHING
    KHARE, R
    HU, EL
    BROWN, JJ
    MELENDES, MA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2497 - 2501
  • [5] REAL-TIME MONITORING AND ANALYSIS OF CHEMICAL WET ETCHING OF III-V COMPOUND SEMICONDUCTORS
    CHAND, N
    KARLICEK, RF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) : 703 - 705
  • [6] Dry etching damage in III-V semiconductors
    Murad, S
    Rahman, M
    Johnson, N
    Thoms, S
    Beaumont, SP
    Wilkinson, CDW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06): : 3658 - 3662
  • [7] REACTIVE ION ETCHING OF III-V SEMICONDUCTORS
    PEARTON, SJ
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1994, 8 (14): : 1781 - 1786
  • [8] (PHOTO)ELECTROCHEMISTRY - A SUITABLE TOOL FOR INVESTIGATING WET ETCHING PROCESSES ON III-V SEMICONDUCTORS
    GOOSSENS, HH
    GOMES, WP
    ELECTROCHIMICA ACTA, 1992, 37 (05) : 811 - 826
  • [9] Chemical Passivation of III-V Semiconductors
    Kunitsyna, Ekaterina
    L'vova, Tatiana
    WOMEN IN PHYSICS, 2013, 1517 : 219 - 219
  • [10] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS
    ASPNES, DE
    STUDNA, AA
    APPLIED PHYSICS LETTERS, 1981, 39 (04) : 316 - 318