ELECTRON TRAPPING NOISE IN SOS MOS FIELD-EFFECT TRANSISTORS OPERATED IN LINEAR REGION

被引：0

作者：

HSU, ST ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

RCA REVIEW | 1977年 / 38卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：226 / 237

页数：12

共 50 条

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