AUGER AND RADIATIVE RECOMBINATION OF ACCEPTOR BOUND EXCITONS IN DIRECT BAND-GAP SEMICONDUCTORS

被引：0

作者：

OSBOURN, GC ^{[1
]}

SMITH, DL ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91109

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1979年 / 24卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：365 / 365

页数：1

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