ENERGY-LEVEL OF THALLIUM IN SILICON

被引:16
作者
BROTHERTON, SD
GILL, A
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D O I
10.1063/1.90231
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O59 [应用物理学];
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页码:953 / 955
页数:3
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共 13 条
[1]   ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON [J].
BROTHERTON, SD ;
BICKNELL, J .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :667-671
[2]  
BROTHERTON SD, UNPUBLISHED
[3]  
Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647
[4]   3-DIMENSIONAL POOLE-FRENKEL EFFECT [J].
HARTKE, JL .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4871-&
[5]  
KOHN W, 1957, SOLID STATE PHYS, V5, P303
[6]   CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].
LAX, M .
PHYSICAL REVIEW, 1960, 119 (05) :1502-1523
[7]   FIELD-DEPENDENCE OF CAPTURE AND RE-EMISSION OF CHARGE-CARRIERS BY SHALLOW LEVELS IN GERMANIUM AND SILICON [J].
MARTINI, M ;
MCMATH, TA .
SOLID-STATE ELECTRONICS, 1973, 16 (02) :129-&
[8]  
PALS HA, 1975, SOLID STATE ELECTRON, V17, P1139
[9]   THERMAL EMISSION AND CAPTURE OF ELECTRONS AT SULFUR CENTERS IN SILICON [J].
ROSIER, LL ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1971, 14 (01) :41-+
[10]   EXTRINSIC SILICON DETECTORS FOR 3-5 AND 8-14 MUM [J].
SCLAR, N .
INFRARED PHYSICS, 1976, 16 (04) :435-448