NUMERICAL-ANALYSIS OF INP-JFET BY USE OF A QUASI 2D-MODEL

被引：0
|
作者：
BROCKERHOFF, W
ELLRODT, P
GULDNER, W
HEIME, K
TEGUDE, FJ
机构：
[1] RWTH Aachen, Department of Solid State Electronics
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90389-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical performance of InP JFET in dependence on transport properties and technological parameters were investigated in detail by use of a quasi two-dimensional model including nonstationary transport effects. The analysis is carried out for gate lengths between 4mum and 0.4mum. The results were compared with experimental data and with those of GaAs and InGaAs FET.
引用
收藏
页码：39 / 42
页数：4
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