TEMPERATURE-DEPENDENT LOW-Q SCATTERING FROM SILICON SINGLE-CRYSTALS

被引：3

作者：

GUPTA, S

MESSOLORAS, S

STEWART, RJ

SCHNEIDER, JR

机构：

[1] UNIV ATHENS,DEPT PHYS,SOLID STATE SECT,GR-15771 ATHENS,GREECE

[2] DESY,HAMBURGER SYNCHROTRONSTRAHLUNGSLAB HASYLAB,W-2000 HAMBURG 52,GERMANY

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1992年 / 4卷 / 24期

关键词：

D O I：

10.1088/0953-8984/4/24/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It has been reported that the low-Q temperature-dependent scattering from silicon single crystals is due to the modification of the phonon curves arising from the presence of oxygen precipitates. Experimental evidence reported here shows that this assumption was incorrect. Furthermore, it is found that this scattering increases linearly with temperature in the temperature range from 300 K to 900 K.

引用

页码：5383 / 5390

页数：8

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