MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS

被引：142
|
作者：
CARNEZ, B
CAPPY, A
KASZYNSKI, A
CONSTANT, E
SALMER, G
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期
关键词：
D O I：
10.1063/1.327292
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：784 / 790
页数：7
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