LOW THRESHOLD CURRENT IMPLANTED-PLANAR BURIED-HETEROSTRUCTURE GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASER IN GAAS ALGAAS

被引：7
|
作者：
VAWTER, GA
MYERS, DR
BRENNAN, TM
HAMMONS, BE
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 20期
关键词：
D O I：
10.1063/1.103030
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report dramatic improvements to the implanted-planar buried-heterostructure graded-index separate confinement heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs which produces low threshold current, continuous-wave operation. Our process features significantly reduced fabrication complexity of high quality, index-guided laser diodes compared to regrowth techniques and, in contrast to diffusion-induced disordering, allows creation of self-aligned, buried, blocking junctions by ion implantation. The improved single-stripe IPBH-GRINSCH lasers exhibit 39 mA threshold current, cw operation.
引用
收藏
页码：1945 / 1947
页数：3
相关论文
共 50 条
  • [1] ULTRALOW THRESHOLD, GRADED-INDEX WAVEGUIDE, SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERS
    TSANG, WT
    LOGAN, RA
    DITZENBERGER, JA
    ELECTRONICS LETTERS, 1982, 18 (19) : 845 - 847
  • [2] CHARACTERIZATION OF PARABOLIC LIGHT-HOLE EFFECTS ON AN IMPLANTED-PLANAR-BURIED-HETEROSTRUCTURE GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE INGAAS-ALGAAS STRAINED-LAYER LASER
    VAWTER, GA
    MYERS, DR
    HOHIMER, JP
    BRENNAN, TM
    HAMMONS, BE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2608 - 2608
  • [3] Graded-index separate confinement heterostructure InGaN laser diodes
    Stanczyk, S.
    Czyszanowski, T.
    Kafar, A.
    Goss, J.
    Grzanka, S.
    Grzanka, E.
    Czernecki, R.
    Bojarska, A.
    Targowski, G.
    Leszczynski, M.
    Suski, T.
    Kucharski, R.
    Perlin, P.
    APPLIED PHYSICS LETTERS, 2013, 103 (26)
  • [4] RECORD LOW-THRESHOLD, SINGLE-STRAINED-QUANTUM-WELL, GRADED-INDEX, SEPARATE-CONFINEMENT HETEROSTRUCTURE LASER
    VAWTER, GA
    MYERS, DR
    BRENNAN, TM
    HAMMONS, BE
    HOHIMER, JP
    ELECTRONICS LETTERS, 1989, 25 (03) : 243 - 244
  • [5] DOUBLE-CHANNEL PLANAR BURIED-HETEROSTRUCTURE LASER DIODE WITH EFFECTIVE CURRENT CONFINEMENT
    MITO, I
    KITAMURA, M
    KOBAYASHI, K
    KOBAYASHI, K
    ELECTRONICS LETTERS, 1982, 18 (22) : 953 - 954
  • [6] SOME CHARACTERISTICS OF THE GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER STRUCTURE
    HERSEE, SD
    DECREMOUX, B
    DUCHEMIN, JP
    APPLIED PHYSICS LETTERS, 1984, 44 (05) : 476 - 478
  • [7] INVESTIGATION OF INDIUM DOPING IN INGAAS GAAS ALGAAS GRADED-INDEX SEPARATED CONFINEMENT HETEROSTRUCTURE LASERS
    TSANG, JS
    LEE, CP
    LIU, DC
    CHEN, HR
    TSAI, KL
    TSAI, CM
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) : 4882 - 4885
  • [8] LOW-THRESHOLD GAAS/ALGAAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON OXIDE-MASKED SI SUBSTRATES
    BURNS, GF
    BLANCK, H
    FONSTAD, CG
    APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2499 - 2501
  • [9] HIGH-POWER LOW-THRESHOLD GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE ALGAAS SINGLE QUANTUM WELL LASERS ON SI SUBSTRATES
    KIM, JH
    LANG, RJ
    RADHAKRISHNAN, G
    KATZ, J
    NARAYANAN, AA
    CRAIG, RR
    APPLIED PHYSICS LETTERS, 1989, 55 (15) : 1492 - 1494
  • [10] DEEP-OXIDE PLANAR BURIED-HETEROSTRUCTURE ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES
    KRAMES, MR
    CHEN, EI
    HOLONYAK, N
    APPLIED PHYSICS LETTERS, 1994, 65 (25) : 3221 - 3223
12345