ROLE OF INTERSTITIAL SILICON ATOMS IN THE CONFIGURATION RESTRUCTURING DIVACANCIES IN THE DEFECT CLUSTERS

The behavior of the mobility of electrons as they diffuse movement in the high-resistivity silicon, grown by floating zone melting (Fz) and Czochralski (Cz), after irradiation with fast neutrons reactor and subsequent annealing at room temperature was described. As part of the revised model of defect clusters was calculated dependence from temperature of the density electrons in the conductive matrix of silicon samples n-type. The energy levels of radiation defects in n-Si defined. It is substantiates the role of interstitial silicon atoms in the hysteresis of the temperature dependence of the electron mobility and their participation in the restructuring of the configuration divacancy defects in clusters.