BODY CONTACTS IN INP-BASED INALAS/INGAAS HEMTS AND THEIR EFFECTS ON BREAKDOWN VOLTAGE AND KINK SUPPRESSION

被引：18
|
作者：
SUEMITSU, T
ENOKI, T
ISHII, Y
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa-Pref, 243-01, 3-1, Morinosato Wakamiya
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 09期
关键词：
HIGH ELECTRON MOBILITY TRANSISTORS; OHMIC CONTACTS;
D O I：
10.1049/el:19950496
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors investigate the effects of body contacts in InP-based In0.52Al0.48As/In0.53Ga0.47As, HEMTs. A body contact connecting a floating InAlAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p(+)-region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel, resulting in higher breakdown voltage and kink-free I/V characteristics.
引用
收藏
页码：758 / 759
页数：2
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