THEORY OF DONOR STATES IN SILICON

被引：748

作者：

KOHN, W

LUTTINGER, JM

机构：

来源：

PHYSICAL REVIEW | 1955年 / 98卷 / 04期

关键词：

D O I：

10.1103/PhysRev.98.915

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：915 / 922

页数：8

共 10 条

[1] EFFECTIVE MASSES OF ELECTRONS IN SILICON [J].

DEXTER, RN ;

LAX, B ;

KIP, AF ;

DRESSELHAUS, G .

PHYSICAL REVIEW, 1954, 96 (01) :222-223

[2]

EYRING, 1944, QUANTUM CHEM, P388

[3] SPIN RESONANCE OF DONORS IN SILICON [J].

FLETCHER, RC ;

YAGER, WA ;

PEARSON, GL ;

HOLDEN, AN ;

READ, WT ;

MERRITT, FR .

PHYSICAL REVIEW, 1954, 94 (05) :1392-1393

[4] HYPERFINE SPLITTING IN SPIN RESONANCE OF GROUP-V DONORS IN SILICON [J].

FLETCHER, RC ;

YAGER, WA ;

PEARSON, GL ;

MERRITT, FR .

PHYSICAL REVIEW, 1954, 95 (03) :844-845

[5] HYPERFINE SPLITTING OF DONOR STATES IN SILICON [J].

KOHN, W ;

LUTTINGER, JM .

PHYSICAL REVIEW, 1955, 97 (04) :883-888

[6]

LAMPERT MA, UNPUBLISHED

[7] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J].

LUTTINGER, JM ;

KOHN, W .

PHYSICAL REVIEW, 1955, 97 (04) :869-883

[8] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].

PEARSON, GL ;

BARDEEN, J .

PHYSICAL REVIEW, 1949, 75 (05) :865-883

[9]

PEARSON GL, UNPUBLISHED

[10] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].

SMITH, CS .

PHYSICAL REVIEW, 1954, 94 (01) :42-49

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