SIMILARITY BETWEEN THE SI(111)-(7 X 7) AND IMPURITY-STABILIZED SI(111)-(1 X 1) SURFACES

被引：52
作者：
EASTMAN, DE
HIMPSEL, FJ
VANDERVEEN, JF
机构：
来源：
SOLID STATE COMMUNICATIONS | 1980年 / 35卷 / 04期
关键词：
D O I：
10.1016/0038-1098(80)90512-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：345 / 347
页数：3
相关论文
共 14 条
[1]   SURFACE STATES AND SURFACE BONDS OF SI(111) [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1973, 31 (02) :106-109
[2]  
BENNETT PG, UNPUBLISHED
[3]   ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].
DUKE, CB .
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1978, 8 (01) :69-91
[4]  
Eastman D. E., 1979, Physics of Semiconductors 1978, P1059
[5]  
EASTMAN DE, J VAC SCI TECHNOL
[6]   STRUCTURE AND TRANSFORMATION CHARACTERISTICS OF IMPURITY STABILIZED PHASES ON SI(111) SURFACE [J].
FLORIO, JV ;
ROBERTSON, WD .
SURFACE SCIENCE, 1971, 24 (01) :173-+
[7]  
HANSSON GV, UNPUBLISHED
[8]  
JEPSEN DW, UNPUBLISHED
[9]  
Pandey K. C., 1979, Physics of Semiconductors 1978, P1051
[10]   ATOMIC DENSITIES OF STATES NEAR SI (111) SURFACES [J].
PANDEY, KC ;
PHILLIPS, JC .
PHYSICAL REVIEW B, 1976, 13 (02) :750-760
12