THIN AG FILM FORMATION BY DEPOSITION OF ACCELERATED AG IONS

被引：4

作者：

IIDA, S

NAKAMURA, T

ASHIMURA, Y

SHINDO, T

机构：

[1] Dept of Electrical Engineering and Electronics, Osaka Sangyo University, Osaka, 574

[2] NTT Kansai Branch, Osaka, 540

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9A期

关键词：

THIN FILM; IONIZATION; CHARGE EFFECT; KINETIC ENERGY EFFECT; SCHOTTKY BARRIER;

D O I：

10.1143/JJAP.34.4920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ag vapor was ionized and accelerated by an electric field to form a thin film on Si(100) and Si(lll) substrates. Despite a small ionization ratio, this deposition system produced a flatter and more highly crystallized film than the conventional deposition system. As a result, the Schottky barrier height decreased with the increase in crystallization. This suggests that the barrier height may be changed in accordance with the degree of metal film crystallization and the surface density of the silicon substrate.

引用

页码：4920 / 4923

页数：4

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