HALL RESISTANCE AND QUANTIZED HALL-EFFECT TO INSULATOR TRANSITIONS IN A 2D ELECTRON-SYSTEM

被引：0

作者：

PUDALOV, VM ^{[1
]}

DLORIO, M ^{[1
]}

CAMPBELL, JW ^{[1
]}

机构：

[1] UNIV OTTAWA,OTTAWA K1N 6N5,ONTARIO,CANADA

来源：

JETP LETTERS | 1993年 / 57卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Hall resistance R(xy) was studied deep in the insulating phase at the quantized Hall effect to insulator transitions in a dilute 2D electron system. While the diagonal resistivity rho(xx) diverges, R(xy) remains close to its classical value, H/nec, at least up to rho(xx) = 4 X 10(6) OMEGA/square. The insulating phase was found to develop directly from at least three QHE phases at v = 1, 2 and 6, in contrast to recent theoretical predictions.

引用

页码：608 / 612

页数：5

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