THE DYNAMICS OF SHALLOW DONOR IONIZATION IN N-GAAS STUDIED WITH SUBNANOSECOND FIR-INDUCED PHOTOCONDUCTIVITY

被引：9
|
作者：
BURGHOORN, J
KLAASSEN, TO
WENCKEBACH, WT
机构：
[1] Fac. of Appl. Phys., Delft Univ. of Technol.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 01期
关键词：
D O I：
10.1088/0268-1242/9/1/006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-temperature dynamics of far-infrared (FIR) excited electrons bound to shallow donors has been studied in n-GaAs. In a magnetic field of 3.6 T the electrons are excited from the ground state to the 2p(+1) donor state with a short pulse of 118.8 mu m radiation and the photoconductive response is monitored with subnanosecond resolution. The observed response can be described with a simple three-level rate equation model, yielding a minimum value of 5 x 10(9) s(-1) for the ionization rate of a shallow donor in the 2p(+1) bound state.
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页码：30 / 34
页数：5
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