CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF INTRINSIC SOLID-PHASE EPITAXIAL-GROWTH IN SELF-ION-IMPLANTED (001)SI

被引：2

作者：

NIEH, CW ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT MAT SCI & ENGN,HSINCHU 300,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：575 / 577

页数：3

共 24 条

[1] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF SOLID-PHASE EPITAXIAL-GROWTH IN BF2+-IMPLANTED (001)SI
NIEH, CW
CHEN, LJ
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3546 - 3549
[2] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF RESIDUAL DEFECTS IN BF2+-IMPLANTED (001)SI
NIEH, CW
CHEN, LJ
JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3114 - 3119
[3] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE GROWTH-KINETICS OF HEXAGONAL MOSI2 ON (001)SI
CHENG, JY
CHENG, HC
CHEN, LJ
JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2218 - 2223
[4] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF RESIDUAL DEFECTS IN BF-2+ IMPLANTED (111) SI
NIEH, CW
CHEN, LJ
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) : 4421 - 4425
[5] CONCENTRATION-DEPENDENCE OF THE SOLID-PHASE EPITAXIAL-GROWTH RATE IN TE IMPLANTED SI
CAMPISANO, SU
BARBARINO, AE
APPLIED PHYSICS, 1981, 25 (02): : 153 - 155
[6] DEFECT FORMATION IN THE SOLID-PHASE EPITAXIAL-GROWTH OF GAAS FILMS ON SI (001) SUBSTRATE
CHO, KI
CHOO, WK
LEE, JY
PARK, SC
NISHINAGA, T
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 237 - 242
[7] LATERAL SOLID-PHASE EPITAXIAL-GROWTH OF PHOSPHORUS-ION IMPLANTED CVD POLYSILICON
WARABISAKO, T
BERNARD, O
MONIWA, M
MIYAO, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 1029 - 1030
[8] High resolution transmission electron microscope study of solid phase epitaxial growth of very high dose, low energy P+ implanted (001)Si
Natl Tsing Hua Univ, Hsinchu, Taiwan
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1997, 121 (1-4): : 195 - 198
[9] High resolution transmission electron microscope study of solid phase epitaxial growth of very high dose, low energy P+ implanted (001)Si
Yang, JJ
Chen, LJ
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4): : 195 - 198
[10] COMPARISON OF RESULTS AND MODELS OF SOLID-PHASE EPITAXIAL-GROWTH OF IMPLANTED SI LAYERS INDUCED BY ELECTRON-BEAM AND ION-BEAM IRRADIATION
LULLI, G
MERLI, PG
PHYSICAL REVIEW B, 1993, 47 (21): : 14023 - 14031

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