共 50 条
- [1] STRUCTURE AND CAPACITANCE OF DIFFUSED P-N-JUNCTIONS WITH DEEP IMPURITY CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 375 - +
- [3] CAPACITANCE OF P-N-JUNCTIONS UNDER ELECTRICAL BREAKDOWN PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (02): : K269 - K272
- [5] RELAXATION OF PHOTOINJECTED CARRIERS IN GERMANIUM P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (03): : 322 - 323
- [6] INVESTIGATION OF THE INFLUENCE OF DEEP LEVELS ON MICROPLASMA BREAKDOWN OF P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (03): : 330 - 332
- [8] ACOUSTIC INJECTION OF CARRIERS BY P-N-JUNCTIONS IN PIEZOELECTRIC SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 343 - 345
- [9] CAPTURE OF NONEQUILIBRIUM CARRIERS AND KINETICS OF THE PHOTORESPONSE OF P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (12): : 1388 - 1390
- [10] BARRIER CAPACITANCE OF DIFFUSED P-N-JUNCTIONS IN GALLIUM-ARSENIDE RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (07): : 1171 - +