INTEGRATED INP/GAINAS HETEROJUNCTION BIPOLAR PHOTORECEIVER

被引：20
|
作者：
CHANDRASEKHAR, S
CAMPBELL, JC
DENTAI, AG
JOYNER, CH
QUA, GJ
GNAUCK, AH
FEUER, MD
机构：
[1] AT&T Bell Lab, United States
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 23期
关键词：
Optoelectronic Devices - Semiconducting Indium Compounds - Signal Receivers - Transistors; Bipolar;
D O I：
10.1049/el:19880986
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report an integrated photodetector-preamplifier circuit implemented with InP/GaInAs heterojunction bipolar transistors. The circuit consists of a three-terminal phototransistor, three bipolar transistors and three resistors. A receiver sensitivity of -26 dbm at 100 Mbit/s has been achieved.
引用
收藏
页码：1443 / 1445
页数：3
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