A LOW DARK CURRENT INGAAS/INP P-I-N PHOTODIODE WITH COVERED MESA STRUCTURE

被引：30
|
作者：
OHNAKA, K
KUBO, M
SHIBATA, J
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期
关键词：
D O I：
10.1109/T-ED.1987.22907
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：199 / 204
页数：6
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