OPTICAL INFORMATION-STORAGE AND CHARGE TRAPS IN PZT THIN-FILMS

被引:2
|
作者
IVEY, M [1 ]
MANCHA, S [1 ]
CARTER, R [1 ]
机构
[1] WEAPONS LAB,KIRTLAND AFB,NM 87117
关键词
D O I
10.1109/58.84272
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
Storage of optical data in thin film PZT has been demonstrated for the first time at a wavelength of 833 nm. A method for the storage and detection of simple optical-data images in thin PZT films is described. Dots and bars were stored in a 0.5-mu-m thick 0/50/50 PZT film using 488, 543, 633, and 833 nm wavelengths, and detected by measuring photocurrents while scanning a low-power read beam across the film. Data presented here suggest that traps and related photoinduced charge carrier generation play an important role in this optical-storage mechanism.
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页码:337 / 343
页数:7
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